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RB450F
Diodes
Schottky barrier diode
RB450F
!Applications Low current rectification !External dimensions (Units : mm)
2.00.2 1.30.1 0.90.1 0.3 0.6
0.30.1
0.150.05
(All leads have the same dimensions)
!Construction Silicon epitaxial planar
ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323
!Circuit
!Absolute maximum ratings (Ta = 25C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 45 40 0.1 1 125 -40~+125
Unit V V A A
C C
!Electrical characteristics (Ta = 25C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min. - - - Typ. - - 6.0 Max. 0.45 1 - Unit V A pF IF=10mA VR=10V VR=10V, f=1MHz Conditions
Note) ESD sensitive product handling required.
0.1Min.
3F
!Features 1) Small surface mounting type. (UMD3) 2) Low IR. (IR=80nA Typ.) 3) High reliability.
0.65
0.65
1.250.1
2.10.1
0~0.1
RB450F
Diodes
!Electrical characteristic curves (Ta = 25C)
1m
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1
100 50
FORWARD CURRENT : IF (A)
100m
REVERSE CURRENT : IR (A)
100
Ta=125C
20 10 5
12 5C 75 C
10m
10
75C
Ta =
25
-2 5
C
1m
C
1
25C
100
100n
2 0 0
10 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10n 0
5
10
15
20
25
30
35
2
4
6
8
10
12
14
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
100
Io CURRENT (%)
80 60 40 20 0 0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (C)
Fig. 4 Derating curve (mounting on glass epoxy PCBs)

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